? semiconductor components industries, llc, 2005 december, 2005 ? rev. 2 1 publication order number: ma3075walt1/d ma3075walt1 preferred device zener transient voltage suppressor sot?23 dual common anode zeners for esd protection these dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. they are intended for use in voltage and esd sensitive equipment such as computers, printers , business machines, communication systems, medical equipment and other applications. their dual junction common anode design protects two separate lines using only one package. these devices are ideal for situations wh ere board space is at a premium. features ? sot?23 package allows two separate unidirectional configurations ? low leakage < 1 a @ 5.0 v ? breakdown voltage: 7.2?7.9 v @ 5 ma ? low capacitance (80 pf typical @ 0 v, 1 mhz) ? esd protection meeting: 16 kv human body model esd protection meeting: 30 kv air and contact discharge ? pb?free packages are available mechanical characteristics: ? void free, transfer?molded, thermosetting plastic case ? corrosion resistant finish, easily solderable ? package designed for optimal automated board assembly ? small package size for high density applications maximum ratings rating symbol value unit peak power dissipation @ 100 s (note 1) p pk 15 w steady state power dissipation derate above 25 c (note 2) p d 225 1.8 mw mw/ c thermal resistance, junction?to?ambient r ja 556 c/w maximum junction temperature r ja 417 c/w operating junction and storage temperature range t j , t stg ? 55 to +150 c esd discharge mil std 883c ? method 3015?6 iec61000?4?2, air discharge iec61000?4?2, contact discharge v pp 16 30 30 kv maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. non?repetitive 100 s pulse width 2. mounted on fr?5 board = 1.0 x 0.75 x 0.062 in. sot?23 case 318 style 12 1 3 2 1 pin 1. cathode 2. cathode 3. anode device package shipping ? ordering information ma3075walt1 sot?23 3000/tape & reel marking diagram preferred devices are recommended choices for future use and best overall value. MA3075WALT1G sot?23 (pb?free) 3000/tape & reel 1 7w5 m 7w5 = specific device code m = date code* = pb?free package *date code orientation and/or overbar may vary depending upon manufacturing location. (note: microdot may be in either location) http://onsemi.com ? for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d.
ma3075walt1 http://onsemi.com 2 electrical characteristics parameter symbol conditions min typ max unit forward voltage v f i f = 10 ma 0.8 0.9 v zener voltage *2 v z i z = 5 ma 7.2 7.5 7.9 v operating resistance r zk i z = 0.5 ma 120 r z i z = 5 ma 6 15 reverse current i r1 v r = 5 v 1 a i r2 v r = 6.5 v 60 a temperature coefficient of zener voltage *3 s z i z = 5 ma 2.5 4.0 5.3 mv/ c terminal capacitance c t v r = 0 v 80 pf t r 0 25 50 75 100 125 150 175 300 250 200 150 100 50 0 figure 1. steady state power derating curve temperature ( c) 0 2040 608 0 100 60 50 30 20 10 0 figure 2. 8 x 20 s pulse waveform t, time ( s) p d , power dissipation (mw) % of peak pulse current 40 90 80 70 peak value i rsm @ 8 s half value i rsm /2 @ 20 s pulse width (t p ) is defined as that point where the peak current decay = 8 s t p 10 100 1000 1000 100 10 1 figure 3. pulse rating curve t p , pulse width ( s) 0 0.2 0.4 0.6 1.2 100 1 0.1 0.01 figure 4. forward current versus forward voltage v f , forward voltage (v) p pk , peak power (w) i f , forward current (ma) 10 0.8 1 t a = 85 c ?40 c 25 c uni?directional tvs i pp i f v i i r i t v rwm v c v br v f
ma3075walt1 http://onsemi.com 3 ?60 20 100 1.2 0.8 0.4 0 figure 5. forward voltage versus temperature t a , ambient temperature ( c) 01 2 3 8 1000 1 0.1 0.01 figure 6. leakage current versus reverse voltage v r , reverse voltage (v) v f , forward voltage (v) i r , leakage current (na) 10 45 t a = 85 c ?40 c 25 c 0.2 0.6 1 ?40 ?20 0 40 60 80 i f = 100 ma 10 ma 3 ma 100 67 ?60 20 100 1000 1 0.1 figure 7. leakage current versus temperature t a , ambient temperature ( c) 5.5 6 6.5 100 0.1 0.01 0.001 figure 8. zener current versus zener voltage v z , zener voltage (v) i r , leakage current (na) i z , zener current (ma) 1 7 7.5 t a = ?40 c 85 c 25 c 10 100 ?40 ?20 0 40 60 80 v r = 6 v 10 88. 5 v r = 5 v v r = 1 v 01 90 50 10 0 figure 9. capacitance v r , reverse voltage (v) 0.1 1 10 0 100 1 0.1 figure 10. operating resistance versus zener current i z , zener current (ma) cd, capacitance (pf) r z , operating resistance ( ) 10 10 2345678 20 30 40 60 70 80 f = 1 mhz t a = 25 c
ma3075walt1 http://onsemi.com 4 sot?23 (to?236) case 318?08 issue an d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318?01 thru ?07 and ?09 obsolete, new standard 318?08. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h style 12: pin 1. cathode 2. cathode 3. anode 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 ma3075walt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
|
